Equipment
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Tool, model, description |
UHV Atomic Layer Deposition system |
Al2O3 and TiO2 thin films (<50 nm), 100 mm wafers, load-lock |
UHV programmable multi-segment CVD reactor |
Combinatorial CVD |
Inficon X-ray photoelectron spectroscopy (XPS) |
Thin film analysis |
Tube furnace Atomic Layer Deposition reactor |
TiN and HfO2 thin films |
Annealing furnace, 1000C, Lindberg |
Thin film annealing in O2 or N2 |
Sopra GES5 spectroscopic ellipsometer |
Thickness and refraction index measurements, auto XY mapping and variable angles, VIS-UV range, microspot |
Automated probe station |
Auto XY mapping of IV, CV, sheet resistance and film thickness |
HP 4145B Semiconductor paramater analyzer |
IV characterization, leakage current |
Agilent E4980A 20Hz-2MHz Precision LCR meter |
CV characterization, permittivity |
Residual gas analyzer, Vision 1000C, MKS, 300 amu CIS |
Mass-spectrometer for in-situ chemical sensing in ALD |
Residual gas analyzer, Inficon 300 amu CIS |
Mass-spectrometer for in-situ chemical sensing in ALD |
Residual gas analyzer, Inficon 200 amu CIS |
Mass-spectrometer for in-situ chemical sensing in ALD |
Gas phase acoustic sensor, Inficon Composer |
Process sensing |
FTIR compact spectrometer, Inficon |
Process sensing |
8" sol-gel spincoater, SP 100 Bidtec controller |
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8" photoresist spincoater, SP 100 Bidtec controller |
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Programmable hot plate, 400C; for sol-gel and photoresist |
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Programmable furnace, Vulcan 3-550, NEY |
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Oven, Blue M, Electric Gal. Signal |
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Oven, Lindberg, Electric Gal. Signal |
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Sartorius A210P microbalance, 1/10000g |
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Microscope, Ferroscope |
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Last updated: Feb. 2009 by Henn-Lecordier |
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